PART |
Description |
Maker |
V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
KM416V4100C KM416V4000C KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
V53C404 |
High Performance / Low Power 1M x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
V53C104BP80 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
V53C104AK-100L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
RT9013-33PU5 RT9013-16PB RT9013-33GU5 RT9013-2HPQW |
500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator 00mA,低压差,低噪声超无旁路电容的CMOS LDO稳压器快 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator 500MA,低压差,低噪声,无旁路电容的CMOS LDO超快速稳压器 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator 00mA,低压差,低噪声超无旁路电容的CMOS LDO快速稳压器 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator 500MA,低压差,低噪声,无旁路电容的CMOS LD超快速O稳压
|
Richtek Technology, Corp.
|
ADCMP608BKSZ-R2 ADCMP608BKSZ-RL |
Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator
|
Analog Devices, Inc.
|
ADCMP608BKSZ-RL ADCMP608 ADCMP60807 ADCMP608BKSZ-R |
Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator
|
AD[Analog Devices]
|
IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
L1152L-XX-AF5-R L1152G-XX-AF5-R |
500mA, LOW DROPOUT, LOW NOISE ULTRA-FAST WITH SOFT START CMOS LDO REGULATOR
|
Unisonic Technologies
|
PI74FCT162240T PI74FCT16240T PI74FCT162H240T PI74F |
Fast CMOS address/clock driver Fast CMOS 16-Bit Buffer /Line Drivers
|
Pericom Technology PERICOM[Pericom Semiconductor Corporation] Pericom Semiconductor Corpo...
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